1μm600v hvic
overview
公司提供的1μm 600v hvic高压浮栅工艺, 拥有200v/600v两个档位的nldmos/高压隔离岛。公司的高压互联自屏蔽技术荣获两项发明专利。为电机驱动、白色家电(ipm模块)、大功率llc、无人机等应用提供了很好的九游会官网真人游戏第一品牌的解决方案。
key features
- cost effective mask layer,competitive rdson and bvdss performance
- foundry compatible 5v cmos,20v mv-ldmos, 200v/600v hvmos island
- rich options included parasitic zener/jfet
- pdk and industry standard cad tools are supported
- supporting thick metal layer
application
-motor driver
-ipm
-llc
-unmanned aerial vehicle
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1.0μm 60v/120v hvic
overview
公司提供的1.0μm 60v/120v hvic工艺, 拥有高可靠性的ldmos以及精简的光刻层次,提供60v/120v两个档位的n/pldmos以及隔离岛。为手持电动工具、平衡车、无人机等应用提供了很好的九游会官网真人游戏第一品牌的解决方案。
key features
- cost effective mask layer,competitive rdson and bvdss performance
- foundry compatible 5v cmos,12v mv-ldmos, 60v/120v hv-ldmos and island.
- rich options included parasitic zener/jfet
- pdk and industry standard cad tools are supported
- supporting thick metal layer
application
- power tools
- ninebot
-unmanned aerial vehicle
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1.0μm 25v 40v hv
overview
1.0μm 25v 40v hv是公司的标准高压工艺平台之一。是以较少光刻层数实现的经济高压工艺,工艺特征为1.0μm 线宽,单层多晶,双层金属,应用于数模混合的高压产品,工艺平台提供常规及隔离的5v低压cmos、25v或40v高压cmos器件,以及多晶高阻和齐纳二极管等器件。
为了节省芯片面积,工艺提供1.0μm 前端0.5μm后端设计规则。
key features
- 5v logic layout & performance compatible with the industry standard
- 1.0 micron front-end, 1.0 micron or 0.5 micron back-end design rule
- epi process for isolated devices
- modular concept (hr/ zener / bjt / special require)
- vgs/vds=5v/25 or vgs/vds=5v/40v,vgs/vds=25v/25 or vgs/vds=40v/40v hvcmos
- high value poly resistor
- i/o cell library with 2kv hbm esd protection levels
application
- lcd driver/led driver
- power management product
- battery protection ic